PART |
Description |
Maker |
ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 8A条一(c)| TO - 220AB现有
|
Continental Device India, Ltd.
|
ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|甲一(c)|63AB
|
Hynix Semiconductor, Inc.
|
IRG4RC10KD IRG4RC10 IRG4RC10KDTRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 5A条一(c)|52AA INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A) 600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
HGT1S3N60B3S HGT1S3N60B3S9A |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB TRANS IGBT CHIP N-CH 600V 7A 3TO-263AB RAIL
|
Fairchild Semiconductor
|
APT30GL100BN |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 30A I(C) | TO-247 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展| 30A条一(c)|47
|
Won-Top Electronics Co., Ltd.
|
IXSK40N60BD1 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-264AA 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 75A条一(c)|64AA
|
IXYS, Corp.
|
HGT1S5N120BNDS HGT1S5N120BNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB 21A, 1200V, NPT Series N-Channel IGBTswith Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor
|
FF100R06KF |
TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 100A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 600V的五(巴西)国际消费电子展| 100号A一(c)|米:HL080HD5.3
|
Infineon Technologies AG
|
IXSH35N100 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 35A I(C) | TO-247AD 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展| 35A条一(c)|采用TO - 247AD
|
PerkinElmer, Inc.
|